Beilstein J. Nanotechnol.2018,9, 1282–1287, doi:10.3762/bjnano.9.120
at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethylborate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the
process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.
Keywords: boron oxide; diffusion and growth; electron beam-induced deposition; surface reactions; trimethylborate; Introduction
Applications for boron
under controlled gaseous environments similar to those found in nanoscale EBID processing have not been realized.
In this article, the deposition of boron-containing material through the EBID process is reported using trimethylborate (TMB, B(CH3O)3) as precursor. TMB is an alkoxide-based molecule with
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Figure 1:
The EBID process and instrumentation. (a) Gaseous TMB precursor is admitted into the vacuum chamber...